The MSCSM120AM02CT6LIAG device is a 1200 V, 947 A full Silicon Carbide power module.
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Features
The following are the features of MSCSM120AM02CT6LIAG device:
• SiC power MOSFET
◦ Low RDS(on)
◦ High temperature performance
• SiC Schottky diode
◦ Zero reverse recovery
◦ Zero forward recovery
◦ Temperature independent switching behavior
◦ Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• M4 and M5 power connectors
• M2.5 signals connectors
• AlN substrate for improved thermal performance