Robust 40 V MOSFETs improve efficiency with lower switching losses and softer recovery diode

The PowerTrench^® T10 family of MOSFETs from onsemi benefits from the latest circuit fabrication technology to produce improved performance across many parameters important to power-system and motor-drive designers. The mOSFETs are suitable for functions including synchronous rectification in dc-dc and ac-dc converters, isolated dc-dc conversion, and ORing circuits. 

Compared to the previous generation of onsemi silicon MOSFETs, the T10 MOSFETs with a 40 V rating provide higher avalanche robustness in fast-switching applications. A softer recovery diode and lower reverse-recovery charge also reduce ringing, overshoot, and system noise while increasing application efficiency.

On-resistance is also some 30% to 40% lower, resulting in higher power density. At the same time, the T10 MOSFET gate charge and output charge are halved in comparison to the previous generation, reducing switching losses and improving energy efficiency. 

The T10 MOSFETs are supplied in two series: the T10S devices optimized for fast-switching conversion applications, and the T10M for motor-control applications. 

The T10S minimize the product of gate charge and on-resistance to give very high efficiency in dc-dc conversion. 

The T10M are optimized for body diode softness and a high unclamped inductive switching (UIS) capability to give high reliability and to reduce exposure to voltage spikes in motor systems.