600 V MOSFET in top-cooled package saves space in <3 kW power supplies
The innovative package of the Vishay SiHR080N60E superjunction MOSFET is lower than a standard D2PAK and offers better thermal performance, giving higher power density in power supply circuits.
Vishay has introduced a MOSFET in the E series of superjunction MOSFETs which has a new, thermally efficient top-side cooled PowerPAK 8 x 8LR package.
The SiHR080N60E MOSFET, intended for use in power supplies rated for up to 3 kW, provides a space-saving alternative to 600 V MOSFETs housed in a standard D2PAK package. The SiHR080N60E package is just 36% of the height of the D2PAK, and it provides an overall space saving of 52%.
At the same time, the high current rating, with a maximum continuous drain current of 32 A at a case temperature of 100°C, means that power-system developers can realize designs with much higher power density than in circuits based on a D2PAK MOSFET.
The PowerPAK 8 x 8LR package, which includes a Kelvin source connection, also offers outstanding thermal performance. Maximum junction-to-case thermal resistance is just 0.25°C/W.
The MOSFET is notable for its efficient conversion performance, thanks to low on-resistance of 84 mΩ and gate charge of 42 nC.