EVAL-6EDL04I065PR

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650 V SOI gate driver 6EDL04I065PR evaluation board

Evaluation board, EVAL-6EDL04I065PR, features Infineon’s latest silicon-in-insulator (SOI) EiceDRVIER™ gate driver IC, 6EDL04I065PR, and TRENCHSTOP™ Reverse Conducting (RC) IGBT, IKD06N60RC2, in a compact, cost-effective three-phase inverter bridge designed to drive a brushless direct current (BLDC) motor.

The board demonstrates 6EDL04I065PR features such as the integrated low-ohmic bootstrap diode, over-current protection (OCP), enable, and fault-reporting, in a compact TSSOP-25 package.

Using Infineon’s SOI technology, 6EDL04I065PR is tolerant to negative transient voltage in inductive load applications. The device can tolerate repetitive negative transient voltage of up to 100 V.

Infineon thin-film-SOI-technology
Maximum blocking voltage +650 V
Output current +0.165 A/-0.375 A
Integrated bootstrap diode
Separate control for all drivers
Over current and under voltage detection
Externally programmable fault clear
Shut down mode during error conditions
CMOS and LSTTL compatible input
Signal interlocking of every phase
Provided space savings & reduced cost
Integrated over-current protection
Up to 50% lower level shift losses
Negative transient voltages up to 100 V
Small IC package solution

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