Automotive-grade 1,200 V SiC MOSFET enables fast switching and high efficiency
The STMicroelectronics SCT040HU120G3AG silicon carbide (SiC) power MOSFET features low on-resistance and high-temperature capability, making it suitable for use in high-voltage circuits in electric and hybrid electric vehicles.
The AEC-Q101-qualified SCT040HU120G3AG from STMicroelectronics is a silicon carbide power MOSFET which uses the ST advanced third-generation SiC MOSFET technology.Ā
This technology provides attractive characteristics for high-voltage applications in electric and hybrid electric vehicles. On-resistance of 40 mā¦ at a gate-source voltage of 18 V remains very low over the entire operating-temperature range, while the breakdown voltage is a minimum of 1,200 V. The SCT040HU120G3AG also offers low capacitance values and fast switching operation, features which result in higher switching frequency and energy efficiency in the application, and enable the designer to reduce system size and weight.