New 100 V N-channel MOSFETs offer high performance at high current
Novel Renesas wafer technology produces 30% lower on-resistance and 40% less gate-drain charge, and cuts package size in half for RBA300N10 100 V MOSFETs, compared to previous generation silicon MOSFETs.
Renesas has introduced new 100 V high-power N-channel MOSFETs that deliver industry-leading high-current switching performance for applications such as motor control, battery management systems, power management, and battery charging.Â
The new RBA300N10EANS and RBA300N10EHPF MOSFETs benefit from the Renesas REXFET-1 wafer manufacturing process, which produces substantially lower on-resistance, contributing to a great reduction in power losses in power-conversion designs. The MOSFETs can handle a drain current of up to 340 A.Â
The REXFET-1 process also enables the new MOSFETs to offer valuable reductions in gate charge and in gate-drain charge, which is the amount of charge that needs to be injected into the gate during the Miller Plateau phase.
The RBA300N10EANS is supplied in an industry-standard TOLL package, and the RBA300N10EHPF in a TOLG package: both are pin-compatible with devices from other manufacturers, while offering a 50% space saving compared to traditional TO-263 packages. The TOLL package also offers wettable flanks for optical inspection.