Low-voltage MOSFETs enable more efficient motor operation

The NextPower MOSFETs from Nexperia, featuring breakdown voltage ratings of 80 V or 100 V, produce low switching and conduction losses, and offer robust operation in electric motors.

The 80 V and 100 V NextPower MOSFETs from Nexperia provide the high-efficiency switching and excellent reliability required in brushless dc (BLDC) and other types of motor. 

Members of the NextPower family such as the 100 V PSMN3R9-100YSF and 80 V PSMN3R5-80YSF MOSFETs feature substantially lower on-resistance than the previous generation of Nexperia MOSFETs, and are housed in a footprint-compatible LFPAK56E package.  

  • The PSMN3R9-100YSF has on-resistance of 4.3 mΩ, compared to 7 mΩ in the previous generation
  • The PSMN3R5-80YSF has on-resistance of 3.5 mΩ, compared to 8 mΩ

 

NextPower 80 V and 100 V MOSFETs also offer an improved body diode which features low maximum source-drain voltage of 1 V. Reverse-recovery charge is as low as 44 nC in the PSMN3R9-100YSF and 25 nC in the PSMN3R5-80YSF. Low reverse-recovery charge reduces spiking and EMI emissions, and contributes to improved switching efficiency in high-performance power converters and motor inverters.

The PSMN3R9-100YSF is featured in the inverter board of a complete three-phase BLDC motor design produced by Nexperia, the NEVB-MCTRL-100 BLDC.

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