Low-voltage MOSFETs offer efficiency and reliability in AI server power supplies
For the RS7E200BG, RS7N200BH, and RS7N160BH MOSFETs, ROHM Semiconductor has developed a new package which increases die size without increasing board footprint, resulting in lower on-resistance and a wider safe operating area (SOA).
ROHM Semiconductor has introduced three N-channel power MOSFETs featuring low on-resistance and a wide SOA which help to improve efficiency and reliability in server power circuits and artificial intelligence (AI) cloud computers.
The new EcoMOSâ„¢ product line-up includes three products:Â
- The 30 V RS7E200BG is suitable for both secondary-side ac-dc conversion circuits and hot-swap controller circuits in the 12 V power supplies used in high-performance enterprise serversÂ
- The 80 V RS7N200BH and RS7N160BH are ideal for secondary ac-dc conversion circuits in 48 V AI server and industrial power supplies
All three MOSFETs are housed in a new DFN5060-8S package which has a footprint of 5 mm x 6 mm. This new package increases the area of the die by approximately 65% compared to MOSFETs in a conventional 5 mm x 6 mm HSOP8 package. This larger die produces both low on-resistance and a wider SOA. The RS7E200BG features on-resistance of 0.53 mΩ, and the RS7N200BH, 1.7 mΩ, both at a gate-source voltage of 10 V.Â
The wide SOA is valuable in servers equipped with hot-swap capability, which allow for the replacement and maintenance of internal boards and storage devices while powered on, and which experience a high inrush current during hot-swap events. The 30 V RS7E200BG achieves an SOA tolerance of over 70 A for a pulse width of 1 ms at a drain-source voltage of 12 V, twice that of MOSFETs in the conventional HSOP8 package.