GaN-based high-voltage flyback regulator offers high power density

The MPXG2100 NovoOne series from Monolithic Power Systems are integrated flyback regulators which use GaN semiconductor technology to achieve high efficiency and to reduce the size of the power system. 

The MPXG2100 consists of a primary-side driver circuit driving a 700V GaN high electron-mobility transistor (HEMT), a secondary controller, secondary ideal diode, and safety rules-compliant feedback circuit. The regulator uses capacitive insulation technology which enables it to eliminate the optocoupler that is normally required for communication between the primary and secondary sides, thus reducing bill-of-materials cost and simplifying the power circuit. The regulator works particularly well with a PFC controller. 

This NovoOne flyback regulator performs adaptive zero-voltage switching in discontinuous conduction mode, drawing on a patented synchronous rectifier (SR) FET control scheme developed by MPS. The SR can match the primary-side driving signal, which means that it can operate safely in continuous conduction mode with a low-line ac input. This allows for the use of a small input bulk capacitor, helping to increase power density. In addition, the regulator’s peak power function enables the use of a smaller transformer and input bulk capacitor than is possible with conventional regulators based on a quasi-resonant control scheme.

The NovoOne family regulators provide a comprehensive set of circuit protection features.