New GaN FETs for high-density power conversion in AI data centers and more

As 4th-generation Gen IV Plus FETs, the 650 V TP65H030G4 offers superior thermal efficiency and ultra-low power loss for power systems ranging from 1 kW to 10 kW, or higher with paralleling.

To significantly reduce switching power loss, the GaN technology has a silicon-compatible gate drive input which retains the simple operation of silicon FETs.

The low-loss d-mode technology enables TP65H030G4 SuperGaN^® FETs to offer improved efficiency compared with silicon, silicon carbide (SiC), and other GaN alternatives. Power loss is minimized with the lower gate charge, output capacitance, crossover loss, and dynamic resistance, in addition to the higher 4 V threshold voltage. This level of power loss is not enabled by enhancement mode (e-mode) GaN FETs.

With a die which is 14% smaller than the earlier Gen IV platform, the Gen IV Plus FETs also reduce on-resistance by 14%, to just 30 mΩ, and offer a 20% improvement in the figure of merit (FOM) of the on-resistance x output-capacitance. System cost and output capacitance are also reduced by the smaller die size, which produces higher efficiency and power density.

To provide design flexibility, the TP65H030G4 GaN FETs are offered in three packages. The TP65H030G4PQS is in a bottom-side TOLL package, and the TP65H030G4PRS is in a top-side TOLT package. The TOLL and TOLT packages provide thermal conduction paths which provide cooler case temperatures. This simplifies paralleling the GAN FETs when designing for higher conduction currents. The standard TO-247 package of the TP65H030G4PWS offers higher thermal capability to support higher power.

All of the TP65H030G4 GaN FETs are fully compatible with existing designs to simplify upgrades.

Applications which can benefit from the high-density power conversion offered by the TP65H030G4 GaN FETs are AI data centers and server power supply systems which include the new 800 V HVDC architecture, in addition to E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters.

Request a free RTDTTP4200W066A-KIT 4.2kW Digital Bridgeless Totem-pole PFC evaluation board for high-efficiency single-phase ac/dc conversion with the TP65H030G4PWS diode-free GaN FET bridge with low reverse recovery charge in a TO-247-package.