Enhancement mode GaN FET for ultra high-frequency switching with low losses
In a 8 mm x 8 mm DFN package, the GAN080-650EBE from Nexperia is an enhancement mode (e-mode) gallium nitride (GaN) FET which supports ultra high-frequency switching.
Rated for 650 V, with 80 mΩ on-resistance, the normally-off GAN080-650EBE GaN FET supports high efficiency in addition to high power density, and features low package inductance and resistance. With no body diode, reverse recovery losses, which are common in silicon diodes, are eliminated, making the GAN080-650EBE ideal for fast-switching applications. The high power dissipation capability of 240 W supports demanding industrial loads such as motor drives and power converters.
Applications which can benefit from the compact GAN080-650EBE include ac-to-dc and dc-to-dc converters and motor drives, in addition to fast battery charging for mobile phones, laptops and tablets, as well as USB Type-C chargers. The GaN FET also adds performance in solar photovoltaic (PV) inverters, Class D audio amplifiers and TV power supply units (PSU).