New mSiC MOSFETs balance performance, price and reliability
Optimized for cost-sensitive applications, the MB and MC family mSiC™ MOSFETs from Microchip simplifies design and supports electrification in automotive, industrial, aerospace and renewables.
The TO-247-4 Notch package of the mSiC MOSFETs offers high creepage and clearance to simplify mechanical design and to boost thermal performance.
Compared to planar and trench MOSFETs, the mSiC MOSFETs offer improved efficiency and lower switching losses. Compatibility with 15 V gate drivers simplifies driving and makes mSiC MOSFETs easy to parallel.
The fast switching speed is due to the low internal gate resistance, and offers low equivalent series resistance (ESR).
With no need for an external freewheeling diode, the mSiC MOSFETs lower the cost of ownership for the application.
In addition to optional AEC-Q101 qualification, long-term reliability is supported by the high-voltage, high-humidity, high-temperature reverse bias (HV-H3TRB) which reduces the risk of field failures which are caused by leakage or breakdown due to moisture.
In the MB family of mSiC MOSFETs, six on-resistance values are available from 20 mΩ to 80 mΩ, and the MSC020SMB120 is rated for the lowest on-resistance of 20 mΩ.
The MSC031SMC120 mSiC MOSFET integrates a gate resistor to improve switching control and stability, in addition to maintaining low switching energy, and robust performance in harsh environments.