Automotive half-bridge power module increases power density with SiC MOSFETs
The ROHM TRCDRIVE pack™ half-bridge modules use silicon carbide MOSFETs and press-fit interconnects to support compact, high-power inverter and converter designs with simplified production flow.
The TRCDRIVE pack half-bridge modules integrate fourth-generation silicon carbide MOSFETs into a compact molded package intended for automotive traction inverters and high-power dc-ac conversion stages. The BST400D12P4A101 and BST500D08P4A104 combine low switching losses with low drain-source on-resistance to support high switching frequencies and increased power density in space-constrained systems.
Both modules share an identical mechanical package, internal layout, press-fit contact technology, and integrated NTC temperature sensor. The primary difference between the two variants is the rated drain-source voltage of the integrated SiC MOSFETs. The BST400D12P4A101 is rated for 1200V operation, while the BST500D08P4A104 is rated for 750V operation, allowing selection based on dc-link voltage requirements without changes to the mechanical or thermal design.
Press-fit power terminals remove production steps from the power stage assembly process and support automated production. The molded package integrates copper clip interconnects and silver-sintered die attach to reduce parasitic inductance and improve thermal cycling capability under automotive operating conditions.
An integrated NTC temperature sensor provides direct junction-proximate thermal feedback, enabling real-time temperature monitoring for inverter protection and control. Both modules are designed for mounting directly to a heatsink using thermal interface material, supporting high continuous current operation and stable thermal performance in traction and power conversion systems.