GaN half-bridge transistor boosts power density for compact motor inverter stages
Integrating a 650V gallium nitride (GaN) half-bridge with a high-voltage driver and protections, the STMicroelectronics GANSPIN61x helps designers to build smaller, efficient three-phase motor inverters while keeping voltage slew rate under control.
STMicroelectronics brings its GaN half-bridge system-in-package in a quad flat no-lead (QFN) format, helping motor-drive designers tame fast edges, reduce electromagnetic interference (EMI), and cut thermal overhead in three-phase inverter stages.
The GANSPIN611TR and GANSPIN612TR are power system-in-package half-bridges that integrate two enhancement-mode GaN transistors with a high-voltage, high-frequency gate driver. GANSPIN611TR integrates two 138mΩ, 650V HEMT GaN with 10A drain current, while GANSPIN612TR provides a pin-to-pin option with 270mΩ and 5.5A drain current.
Designed for motion control, both variants optimize voltage slew rate output to 10V/ns in hard-on and hard-off transitions, tailored for EMI and motor reliability.
The integrated driver includes linear regulators for high-side and low-side supplies, an internal bootstrap diode, a comparator for overcurrent detection with smart shutdown, and under-voltage lockout (UVLO) monitoring on the voltage supply for logic, and for the high- and low-side driver. Interlocking, shutdown, standby and fault pins support robust system control, with a 55ns gate driver contributing to an overall 150ns output propagation delay. Inputs are compatible from 3.3V to 20V with hysteresis and pull-down.