The PSOC Edge E84 evaluation kit is a hardware evaluation platform for rapid prototyping of applications based on the PSOC Edge MCU family. Featuring the high-performance, low-power, secured MCUs with advanced machine learning (ML) acceleration for next-generation AI/ML applications, this evaluation kit provides easy access to all of the interfaces and capabilities of the PSOC Edge MCUs.
The OPTIGA™ Authenticate NBT Development Shield combines hardware components to allow evaluation and development of applications for the OPTIGA™ Authenticate NBT, NFC Type 4 asymmetric tag.
For activating and using shared e-bikes with NFC-enabled smart phones, locking and unlocking personal portable HDD drives with NFC-enabled smart phones, and healthcare applications involving data logging and secured data monitoring. The industrial applications involve configuration and parametrization of electric relay switches, circuit breakers and more.
The SECO-NCD5700-GEVB daughter card includes a high-current, stand-alone NCD5700 IGBT gate driver, with a FODM217D single-channel phototransistor optocoupler, and two FODM611 high immunity logic gate output optocouplers, plus all of the necessary drive circuitry. Any MOSFET or SiC MOSFET in a TO-247 high-voltage through-hole package can be soldered and testing.
The daughter card is compatible with the SECO-GDBB-EVB gate drivers baseboard for testing up to 3 half-bridge daughter cards simultaneously to compare performance.
The EVLGANSPIN1-3PH is a three-phase inverter reference design based on GANSPIN611 and an STM32G431RB Arm® Cortex™-M4 MCU at 170MHz, built for sensorless field-oriented control (FOC) of permanent magnet synchronous motors (PMSMs) and brushless dc (BLDC) motors.
The board includes a 230V ac mains input filter and rectifier, uses a 3-shunt topology, and demonstrates typical power up to 400W at 16kHz with dV/dt tuned to 10V/ns for EMI and motor reliability. It provides UART, Hall sensor, and SWD interfaces and includes 12V, 5V, and 3.3V supply rails generated with VIPER06LS, with shunt amplifiers using TSV911ILT.
The nPM2100-EK allows for easy, code-free configuration of the nPM2100 PMIC through the nPM PowerUP application. The kit includes add-on boards and holders for AA, AAA, LR44, and CR2032 batteries for evaluation of different battery combinations. Settings can be configured via a graphical user interface (GUI) and exported as code for implementation in firmware. The board provides access to all PMIC functions including fuel gauge and power-saving modes.
The EVLSTGAP3SXS-H is a half-bridge evaluation board designed to evaluate the STGAP3SXS isolated single gate driver for SiC MOSFETs.
The STGAP3SXS offers 10A current capability, rail-to-rail outputs and optimized UVLO and desaturation protection thresholds for SiC MOSFETS. This makes the STGAP3SXS optimal for high-power motor drivers in industrial applications.
The gate driver has a single output pin and a driver line for an external Miller clamp N-channel MOSFET, which optimizes the suppression of positive and negative gate spikes during fast commutations in half-bridge topologies.
The board is supplied by the 5V VAUX connection, which feeds the isolated dc-dc converters for the low-side and high-side driving sections. The gate drivers can be directly supplied by VAUX if a 5V MCU is used, or by the onboard linear regulator if a 3.3V MCU is used. The PWM and Reset inputs can be easily controlled through dedicated connectors while diagnostic outputs are connected to an onboard LED.
Device protection features for desaturation, soft turn-off, and Miller clamp are connected to the recommended network on the board and can be easily evaluated through the board test points.
Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction.
The STGAP3SXS allows the implementation of negative gate driving, and the onboard isolated dc-dc converters allow working with optimized driving voltage for SiC MOSFETs.
The EVLSTGAP3SXS-H board allows evaluating all of the STGAP3SXS features while operating with a bus voltage up to 520V. It is possible to increase the bus voltage up to 1200V by replacing the two SiC MOSFETs with appropriate devices in a HiP247-4 package and the C4 capacitance if needed.
