1,200 V MOSFET offers lower losses and improved thermal performance
The second-generation IMZC120R026M2H from Infineon builds on the strengths of the first generation of CoolSiCā¢ silicon carbide (SiC) MOSFET technology to offer benefits including lower on-resistance and faster switching capability.
The IMZC120R026M2H, a member of the second generation of the Infineon CoolSiC family, is a 1,200 V SiC MOSFET which enables power-system developers to realize more efficient, compact, and reliable system designs.Ā
Housed in a 4-pin TO-247 package which provides a 9 mm creepage distance, the IMZC120R026M2H offers various improvements over the first-generation CoolSiC technology. On-resistance of 26 mĪ© produces lower losses and improved performance in both hard-switching operation and soft-switching topologies for all common combinations of ac-dc, dc-dc and dc-ac conversion stages.
Compared to the first generation, the new CoolSiC G2 MOSFETs support more than 30% faster switching. In three-phase power schemes, 1,200 V CoolSiC MOSFETs produce between 5% and 25% lower power losses depending on the load condition.
The IMZC120R026M2H takes advantage of the Infineon unique .XT interconnection technology to provide 12% better thermal performance. In addition, the overload voltage rating is specified up to a junction temperature of 200Ā°C for a total of 100 hours.