1,200 V SiC Schottky diode performs ultra-efficient switching
The STMicroelectronics STPSC20H12G2-TR uses a silicon carbide substrate to provide superior electrical and thermal characteristics, and can handle high voltage surges to give robust performance across a range of applications.
The STMicroelectronics STPSC20H12G2-TR is a 20 A, 1,200 V Schottky power diode fabricated on a silicon carbide (SiC) substrate which supports very fast and efficient switching. It is ideal for use in power-conversion functions such as:
- Power factor correction
- Dc-dc power converters
The wide-bandgap SiC material permits the design of a Schottky diode structure which combines a low forward voltage, for reduced power loss and higher efficiency, with the robustness to handle a 1,200 V repetitive peak reverse voltage. The forward voltage drop is typically 1.5 V at a forward current of 20 A and a junction temperature of 25°C.
Because of the Schottky construction, the diode draws little or no reverse-recovery current at turn-off, and ringing patterns are negligible. The negligible turn-off capacitance characteristic is stable across the operating-temperature range.
The STPSC20H12G2-TR helps to boost performance in hard-switching applications. Its high forward surge capability ensures robust operation when exposed to transient voltages.
The STPSC20H12G2-TR is supplied in a 10.0 mm x 15.3 mm D²PAK HV package.