1,500V SiC MOSFET reduces conduction losses in high-voltage power converters

The S3M0130150K is a 1500V silicon carbide (SiC) power MOSFET which combines high blocking voltage capability with low on-resistance to improve the efficiency and to reduce the size of switching power converters.

In solar energy generation and energy storage, the S3M0130150K supports the trend toward higher system voltages. For auxiliary power supplies operating higher than 1000V dc, these SiC MOSFETs allow designers to implement a single-switch flyback topology. This reduces design complexity and component count compared to silicon MOSFETs that typically require a dual-transistor flyback topology.

Housed in a 4-pin TO-247-4 package, the MOSFET includes a Kelvin source pin, separating the gate drive loop from the power source loop. This reduces the effect of source inductance, enabling faster switching speeds and lower switching losses compared to standard 3-pin packages.

The S3M0130150K has positive temperature characteristics, which simplifies parallel connection for higher power requirements. It also features a robust intrinsic body diode with low reverse recovery charge, which is suitable for hard-switching designs.