1,700 V SiC MOSFETs simplify design of high-voltage auxiliary power supplies
The SMC S1M1000170x family of silicon carbide (SiC) MOSFETs gives designers the headroom to reduce component count and increase efficiency in power systems operating at voltages higher than 800 V.
SMC supplies a family of 1,700 V SiC MOSFETs which offers a combination of high-voltage and high-temperature capability, high switching speed and low on-resistance, improving the efficiency and reducing the size and weight of switching power converters.
The 1,700 V SiC MOSFETs are available in three packaging options:
- S1M1000170K and S1M1000170K-A in TO-247-4 package
- S1M1000170D and S1M1000170D-A in TO-247-3 package
- S1M1000170J and S1M1000170J-A in TO-263-7 package
These SMC SiC MOSFETs are high-voltage N-channel enhancement-mode MOSFETs which have very low total conduction losses and stable switching characteristics over a wide temperature range.
The -A SiC MOSFETs are AEC-Q101 qualified for automotive applications, and are ideal for use in the auxiliary power supplies of fast-charging electric vehicles operating at voltages of 800 V and above.
In solar energy generation and energy storage, the S1M1000170x SiC MOSFETs support the trend towards higher voltages. At higher than 1,000 V dc, the use of silicon MOSFETs in auxiliary power supplies typically requires a dual-transistor flyback power topology. By using the SMC 1,700 V SiC MOSFETs, designers can implement a single-transistor flyback topology instead. This not only simplifies the design and reduces design complexity, but also enhances the efficiency and reliability of an auxiliary power supply.