650 V GaN HEMT integrates silicon driver to simplify system implementation
The ROHM Semiconductor Nano Capā¢ EcoGaNā¢ GaN HEMT power stage ICs offer a streamlined alternative to silicon superjunction MOSFET power architectures, with a high switching slew rate of 150 V/ns and on-state resistance as low as 70 mĪ©.
The BM3G015MUV-LB and BM3G007MUV-LB 650 V enhancement GaN HEMT power stage ICs from ROHM Semiconductor provide a highly integrated industrial-grade solution for systems requiring high power density and efficiency.
The BM3G015MUV-LB and BM3G007MUV-LB bring the GaN HEMT and driver into the same package, resulting in several advantages over discrete architectures. These include a significant reduction in parasitic inductances caused by PCB and wire bonding, faster slew rates and approximately 55% reduction in power loss. By integrating the gate driver, ROHM also eliminates the need for often troublesome GaN HEMT drive adjustment.Ā
Adjustable gate drive strength optimizes EMI performance. In addition, an integrated Nano Capā¢ 5 V LDO and protections for VDD, under-voltage lockout (UVLO) and thermal shutdown enable simplified design integration for further reductions in bill-of-materials cost.
The Nano Cap EcoGaN GaN HEMT power stage ICs feature a drain voltage range of 6.25 V to 30 V. The input control voltage pin accepts -0.6 V to 30 V, and the maximum input switching frequency is 2 MHz. The package is an 8 mm x 8 mm x 1 mm VQFN046V8080 specified for operation in temperatures from -40Ā°C to 105Ā°C.