80 V MOSFET saves space and power in dc-dc converters
The SiZF4800LDT from Vishay, in a thermally efficient 3.3 mm x 3.3 mm PowerPAIR® package, features the fourth generation of the TrenchFET® MOSFET technology, for high efficiency when switching at high frequency.
The SiZF4800LDT 80 V dual N-channel MOSFET from Vishay offers high efficiency in high-frequency switching power converters in a synchronous buck topology. The MOSFET is suitable for operation in half-bridge circuits and in point-of-load power supplies.
The SiZF4800LDT is based on Vishay’s TrenchFET Gen IV technology. The combination of high- and low-side MOSFETs in the SiZF4800LDT is suitable for operation in a 50% duty cycle. Thanks to low on-resistance and low gate charge, the MOSFET enables designers to achieve high efficiency when switching at high frequency.
The MOSFET is housed in a 3.3 mm x 3.3 mm PowerPAIR package. Based on flip-chip technology, this package offers excellent thermal performance.
The SiZF4800LDT features maximum on-resistance of 19 mΩ at 10 V, gate charge of 7.1 nC, and can handle a maximum drain current of 36 A.