800 A IGBT module offers high efficiency in high-power conversion systems
The NXH800H120L7QDSG power module from onsemi features new field stop trench technology which results in lower losses. Extensive testing assures the reliability of the module in harsh and demanding operating conditions.
The onsemi NXH800H120L7QDSG is a 1200 V, 800 A-rated half-bridge QDual3 IGBT power module which provides an output rated for a maximum of 1,200 V and 800 A. Featuring field stop trench 7 (FS7) IGBTs and seventh-generation diodes, the NXH800H120L7QDSG produces lower conduction losses and switching losses than previous IGBT modules, enabling designers to achieve higher efficiency and superior reliability.
The FS7 technology used for the switches in the QDual3 module has a substantial impact on performance and efficiency in high-power applications such as solar inverters and energy storage systems. In particular, the important parameter of saturation voltage has been improved by 0.4 V compared to the previous generation of onsemi IGBTs.
FS7 technology also shrinks the chip size by around 30% compared to its predecessor, enabling onsemi to increase power density in this QDual3 module.
Every module incorporates an isolated baseplate for mounting and thermal management. Direct PCB mounting is possible using solderable pins which are configured in an industry-standard layout pattern. This allows for multi-sourcing, as well as giving the ability to retrofit the NXH800H120L7QDSG to existing designs.
All QDual3 modules are subject to stringent reliability tests. Humidity testing is performed with a 960 V bias voltage for 2,000 hours, more demanding than the 80 V for 1,000 hours normally applied to this class of power module. Vibration testing is performed at 10Grms for 22 hours to meet the requirements of the AQG324 standard, much more than the 5G/1 hour test used elsewhere.