800 V MOSFET enables designers to achieve high power density

The STP80N1K1K6 MOSFET from STMicroelectronics features very low on-resistance as a function of area, helping designers to develop power systems that are both compact and efficient.

The STP80N1K1K6 from STMicroelectronics is a very high-voltage superjunction power MOSFET supplied in a TO-220 package. 

The MOSFET uses ST’s MDmesh K6 technology, which is the result of 20 years of experience in the development of superjunction MOSFETs. This K6 technology enables ST to produce high-performance 800 V-rated MOSFETs which are extremely easy to use. 

The N-channel STP80N1K1K6 combines very low on-resistance of 1.1 Ω with low total gate charge of 5.7 nC to produce high switching performance and low overall power losses. Maximum continuous drain current is 3 A at a case temperature of 100°C. 

With the STP80N1K1K6 and other K6 MOSFETs, ST has achieved the best-in-class on-resistance as a function of area, enabling designers to realize smaller power-system designs. The K6 MOSFETs are an ideal fit for applications such as LED drivers and auxiliary power supplies that are based on a flyback converter topology and that require high power density and high efficiency.

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