800 V MOSFET enables designers to achieve high power density

The STP80N240K6 from STMicroelectronics features very low on-resistance as a function of area, helping designers to develop power systems that are both compact and efficient.

The STP80N240K6 from STMicroelectronics is a very high-voltage superjunction power MOSFET supplied in a TO-220 package. 

The device uses ST’s MDmesh K6 technology, which is the result of 20 years of experience in the development of superjunction MOSFETs. This K6 technology enables ST to produce high-performance 800 V-rated MOSFETs which are extremely easy to use. 

The N-channel STP80N240K6 is part of the 800 V K6 family of MOSFETs. It combines very low on-resistance of 197 mΩ with low gate charge to produce high switching performance and low overall power losses. Maximum drain current is 16 A. 

With the STP80N240K6, ST has achieved the best-in-class on-resistance as a function of area, enabling designers to realize smaller power-system designs. The STP80N240K6 is an ideal fit for applications such as LED drivers and auxiliary power supplies that are based on a flyback converter topology and that require high power density and high efficiency.

In the same K6 family is the STP80N450K6, an 800 V N-channel MOSFET in a TO-220 package. The STP80N450K6 features on-resistance of 380 mΩ, and has a maximum drain current of 10 A.

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