Add efficiency with flexible design options from high-current IGBT gate drivers
As a high-current single channel IGBT gate driver, the onsemi NCD57080 offers 3.75kVrms internal galvanic isolation, and the NCD57090 increases this to 5kVrms of internal galvanic isolation.
Both gate drivers enable high system efficiency, in addition to reliability, for high-power applications. Complementary inputs are accepted and the drivers offer three options which depend on the pin configuration. These options are an active Miller clamp on the NCD570x0A, negative power supply on the NCD57090B, and separate high and low driver outputs on the NCD570x0C. The availability of these options adds to design flexibility and simplicity.
All of gate drivers feature input bias voltage and signal levels which range from 3.3V to 20V. The NCD57080 is in a narrow-body SOIC-8 package, and NCD57090 has a wide-body SOIC8 case.
In addition to the NCD570x0 gate drivers there is the MC33153 single IGBT gate driver with 1.0A source, 2.0A sink and integrated protection features. The stand-alone NCD5700 IGBT gate driver offers +4A/-6A current output and low output impedance.