Automotive-grade 650V SiC MOSFET boosts power density in converters
The SCT027HU65G3AG silicon carbide (SiC) power MOSFET from STMicroelectronics supports compact high-voltage converters with fast switching, in addition to robust diode behavior with low thermal resistance.
The SCT027HU65G3AG is an automotive-grade SiC MOSFET rated at 650V and 60A, with a typical drain-to-source on-resistance of 29mΩ. Built on the STMicroelectronics third generation SiC MOSFET technology, it targets low conduction losses and high-frequency switching for electric vehicle (EV) power conversion stages such as traction inverters and on-board chargers.
In the 7-pin HU3PAK surface-mount, top-side cooling package, SCT027HU65G3AG is designed for high-current assemblies where thermal management is handled through an external heatsink mounted to the package top side. This approach helps to manage fast switching edges while maintaining a low thermal path from junction to case.
The SCT027HU65G3AG includes separate power-source and driver-source connections plus a source sensing pin to reduce parasitic effects and improve switching efficiency. Low capacitances and fast switching characteristics help to reduce switching losses, while the fast and robust intrinsic body diode supports bidirectional current flow needed in bidirectional conversion stages.