Automotive-grade MOSFET boosts power density for low-voltage power stages
STMicroelectronics offers its STripFET F8 switch in a surface-mount package which helps automotive designers to reduce conduction losses, limit switching noise, and ease thermal designs.
The STL325N4F8AG is an automotive-grade N-channel power MOSFET rated at 40V and 350A, with 0.85mΩ maximum drain-to-source on-resistance supporting very low conduction losses in demanding low-voltage automotive and industrial power conversion.
Built on the STMicroelectronics STripFET F8 technology with an enhanced trench gate structure, STL325N4F8AG reduces internal capacitances and gate charge for faster, more efficient switching. Total gate charge is 80nC, and capacitances include 6600pF input and 1970pF output, helping designers to manage switching transitions in high-current motor control and power distribution.
In the PowerFLAT 5mm x 6mm wettable flank package, STL325N4F8AG supports compact layouts and reliable assembly inspection, while the improved body-drain diode softness helps to reduce electromagnetic interference (EMI), in low-voltage switching applications.