Automotive-qualified 100 V half-bridge gate driver features on-chip bootstrap diode
The MPQ1923-AEC1 from Monolithic Power Systems, a 100 V automotive-grade half-bridge gate driver for N-channel MOSFETs, features short rise and fall times to support high-frequency switching.
The MPQ1923-AEC1 from Monolithic Power Systems is a high-frequency half-bridge gate driver that provides a protected solution for driving motors, power supplies, two-switch forward converters, and active-clamp forward converters.
Featuring an integrated bootstrap diode, the MPQ1923-AEC1 reduces the external component count. The gate driver drives a 1 nF load with a rise time of 7.2 ns and a fall time of 5.5 ns at 12 V, making it suitable for use in high-frequency switching converters.
The low- and high-side N-channel MOSFET driver channels are controlled independently, and are matched with a time delay of less than 5 ns. In the event of an insufficient power supply, the under-voltage lockout protection function forces the outputs to the low- and high-side MOSFETs to low.
The MPQ1923-AEC1 is supplied in two QFN package options with ten or eight leads, both with a footprint of 4 mm x 4 mm.