Boost efficiency in electric and hybrid vehicles with qualified Power MOSFET
Using the innovative 3rd generation of SiC MOSFET technology from STMicroelectronics, the SCT019HU120G3AG Power MOSFET features very low on-resistance over the full temperature range.
The performance of the Power MOSFET is also improved with low capacitances and very high switching. These features enable the SCT019HU120G3AG to achieve advanced frequency performance in addition to increasing energy efficiency, and the HU3PAK package supports a reduction in the size and weight of the system.
Qualified to AEC-Q101 for automotive applications, this Power MOSFET is rated for 1200V drain-source voltage, 19.2mΩ on-resistance, and 90A current.