Compact power module provides isolated gate bias voltage to power switches
Part of a broad portfolio of gate-drive modules, the RECOM R9C1T18/R isolated dc-dc converter module’s programmable output is compatible with all types of power switch, including the latest wide bandgap semiconductor devices.
RECOM supplies a broad range of dc-dc converters for providing an isolated gate bias voltage to IGBTs, silicon MOSFETs, silicon carbide (SiC) MOSFETs and gallium nitride (GaN) power transistors.
This RECOM portfolio includes the 1.5 W R9C1T18/R power module in a 36-pin SSOP surface-mount package which has a footprint of 7.5 mm x 12.83 mm. The module operates over an input-voltage range of 8.5 V to 18 V dc. The asymmetrical output voltages are programmable in a range from ±2.5 V to ±15.5 V.
The module offers superior reliability, even when operating in harsh, high-power and high-frequency switching environments. The ultra-low isolation capacitance of less than 3.5 pF ensures minimal noise propagation across the isolation barrier.
While the R9C1T18/R’s +15.5 V/-2.5 V capability is particularly well suited to driving the gate of SiC MOSFETs, the broad RECOM portfolio also includes other power modules with a +7 V/-3 V output capability for GaN transistors.