Double-cooled MOSFETs increase power density in high-current designs
The SiDR626LDP and SiDR680ADP from Vishay are 60V and 80V N-channel MOSFETs based on fourth-generation TrenchFET technology featuring low on-resistance and gate charge in a PowerPAK® package.
The Vishay SiDR626LDP and SiDR680ADP MOSFETs enable the design of systems with tighter power budgets and thermal margins.
Both MOSFETs offer a low maximum on-resistance and high continuous drain current, making them particularly suitable for synchronous rectification and high-current motor drive applications. The MOSFETs are tuned for the lowest on-resistance x output capacitance figure of merit (FOM) to improve efficiency in high-frequency switching topologies.
Housed in a PowerPAK® SO-8DC package, the SiDR626LDP and SiDR680ADP allow for the attachment of a heatsink directly to the top of the leadless package. This feature significantly lowers the thermal resistance and allows for more effective thermal management in space-constrained designs.