Dual IGBT gate driver provides high galvanic isolation
The NCD57252 from onsemi offers flexible configurations for use in industrial power supplies and solar energy systems. The NCV57252 variant is AEC-Q100 qualified and PPAP capable for use in automotive applications.
The NCD57252 from onsemi is a high-current, dual-channel isolated IGBT gate driver which offers internal galvanic isolation from the input to each output, and functional isolation between the two output channels.Ā
The gate driver is supplied in two package variants: the galvanic isolation it offers is either 2.5 kV or 5 kVrms depending on the package. The peak output current also depends on the chosen package: either Ā±6.5 A or Ā±3.5 A.Ā
Accepting signals and a bias voltage in a range from 3.3 V to 20 V on the input side, the NCD57252 supplies up to a 32 V bias voltage on the output side. The driver handles complementary inputs, and provides separate pins for disable and dead-time control, for easier system design.Ā
The NCD57252 supports various configurations and can be used as a dual low-side, a dual high-side, or a half-bridge driver.Ā
Other gate drivers in the same family, the NCD57253 for silicon carbide MOSFETs, and the NCD57255 for IGBTs, share similar electrical characteristics to the NCD57252.