Galvanically isolated gate drivers offer flexible protection for IGBTs and SiC MOSFETs
Ideal for industrial and energy applications, the new STGAP3S family of gate driver ICs from STMicroelectronics is available with two maximum current options, and is equipped with various device protection features.
STMicroelectronics has introduced the new STGAP3S family of gate drivers for silicon carbide (SiC) and IGBT power switches. The drivers combine the latest robust galvanic isolation technology from ST with optimized desaturation protection and a flexible Miller clamp architecture.
Featuring reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, the STGAP3S withstands a transient isolation voltage of up to 8 kV, and provides 200 V/ns of common-mode transient immunity. The isolation capability means that the STGAP3S can enhance reliability in motor drives for industrial applications. The new drivers are also ideal for power-control and energy applications.
The STGAP3S family includes options for 10 A and 6 A current capability, each available with different under-voltage lockout and desaturation intervention thresholds. This helps designers to select the best gate driver to match the performance of the SiC MOSFET or IGBT power switch.
The desaturation protection implements overload and short-circuit protection for the external power switch: this means that the designer can adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive over-voltage spikes. The integrated Miller clamp architecture in the driver provides a pre-driver for an external N-channel MOSFET.
Together, these features mean that designers have the flexibility to select a suitable intervention speed which both prevents induced turn-on and avoids cross-conduction.