GaN FET offers efficiency, speed and low losses for bridgeless totem-pole PFC
The high efficiency, low switching losses, and fast switching speeds of the GAN039-650NTB gallium nitride (GaN) FET from Nexperia are delivered in a CCPAK1212i package.
The full copper clip package CCPAK1212i supports high board reliability, and for optimal cooling the temperature difference between the junction and mounting base is reduced. The GAN039-650NTB also features lower inductances to reduce switching losses and electromagnetic interference (EMI). Compared with QFN packages, the CCPAK1212i absorbs mechanical stress during thermal cycling.
The package of the GAN039-650NTB also features low forward voltage of the body diode which reduces losses and simplifies dead-time adjustments. A strong transient over-voltage capability supports increased robustness. The 4 V gate threshold voltage supports immunity to gate bounce.
Thanks to the gull-wing leads, easy solder wetting allows for good mechanical solder joints and automated optical inspection (AOI) of soldering removes the need to use costly x-ray equipment.
The GAN039-650NTB is a 650 V, 33 mΩ normally-off GaN FET which features high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies. This combination offers superior reliability and performance for bridgeless totem-pole PFC topologies.