High access speed with added data security and reliability from NOR Flash memory
The key benefits of the S26KS512S, 512Mb (64MB) HYPERFLASH™ NOR memory from Infineon are high throughput for fast data access and double data rate (DDR) to boost performance.
Integration is simplified by the 8-bit DDR HYPERBUS™ interface, and to reduce latency the S26KS512S offers 96ns random access. The large buffer accelerates programming and error correction code (ECC) with 1-bit correction, ensures the reliable integrity of data, with cyclic redundancy check (CRC) for fast data error detection.
The S26KS512S memory adds 333MBps sustained read throughput at 1.8V and 166MHz frequency, and supports 1.8V or 3.0V operation. To protect critical data, there is a secure region, and flexible sector protection provides an additional level of security. The low-power standby and deep power-down modes enable battery life to be extended.
The S26K family of HYPERFLASH™ NOR memory are also offered in lower density and capacity of 256Mb and 32MB, in addition to 128Mb and 16MB.