High-performance dual MOSFET gate driver for compact and efficient motor control
The NGD4300DDJ gate driver from Nexperia uses fast switching and integrated protection to enable compact and efficient motor control by driving high- and low-side N-channel MOSFETs.
The MOSFETs can be in synchronous buck or half-bridge configuration, and the floating high-side driver is compatible with rail voltages up to 120 V and features a bootstrap supply with an integrated diode.
To add protection, the independent under-voltage lockout (UVLO) on the low- and high-side output drivers disables the output driver when the supply is below the threshold level.
The input control signals on the NGD4300DDJ MOSFET accept TTL and CMOS signaling down to 2.5 V, and the low-power operation is supported by an internal voltage regulator supplying the signal paths which control the low- and high-side power switches. This low-power operation is achieved regardless of the supply voltage of the IC.
The low- and high-side signal paths feature delay matching of 1 ns, and the 4 A peak source and sink current of the driver output stage guarantees short rise- and fall-times even at high loads.
The SO8, HWSON8 and HSO8 packages enable the NGD4300DDJ to operate over an extended temperature range from –40°C to 125°C. Electrostatic discharge (ESD) protection on the human body model (HBM) is to ANSI/ESDA/JEDEC JS-001 Class 2 over 2000 V, and to ANSI/ESDA/JEDEC JS-002 Class C3 over 1000 V on the charged device model (CDM).