Improve safety and isolation with SiC Power MOSFET in an ISO247-4L package
The IXSJ80N120R1K SiC power MOSFET from Littelfuse improves the overall thermal resistance and power handling in applications which need to combine hard switching with stringent isolation.
With a blocking voltage of 1200V and an 80A current, the IXSJ80N120R1K also achieves on-resistance of 18mΩ. High-speed switching is supported by this SiC power MOSFET to enhance the the safety of the application. The integrated ultra-fast intrinsic body diode offers fast reverse recovery time of 13ns and 26ns.
The high-performance ceramic-based ISO247-4L package offers isolation of 2500Vac, and EMI is reduced by the small chip-to-heatsink stray capacitance.
The IXSJ80N120R1K offers features which are designed to enhanced safety in applications which must meet critical standards of isolation.