Increase power density and efficiency with enhancement-mode PowerGaN transistor
The SGT070R70HTO from STMicroelectronics is an enhancement mode (e-mode) PowerGaN transistor rated for 700V with 26A current and 53mΩ on-resistance at 25°C in a proven packaging technology.
As a gallium nitride high-electron-mobility transistor (G-HEMT), the SGT070R70HTO offers extremely low conduction losses, which are combined with high current and ultra-fast switching. These features enable this e-mode PowerGaN transistor to achieve high power density and extreme efficiency.
The Kelvin source pad supports optimum gate driving and the SGT070R70HTO also features zero reverse recovery charge, in addition to a safeguard against electrostatic discharge (ESD) rated at 2kV HBM.