Latest M3S technology for fast switching and low losses from high-voltage SiC MOSFET
As a 1,200V planar EliteSiC™ MOSFET from onsemi, the NTH4L022N120M3S features M3S technology which is optimized for fast switching and reliable operation during negative gate voltage drive and turn-off spikes on the gate.
This SiC MOSFET can be driven with 18V gate drive and also 15V gate drive, and features on-resistance of 22mΩ. Also rated for 1,200V, the NTBG014N120M3P planar SiC MOSFET features M3P technology and on-resistance of 14mΩ.
With lower voltages, the NTBG015N065SC1 is rated for 650V and 12mΩ on-resistance, and the NTBG020N090SC1 combines 900V voltage with 20mΩ on-resistance. Both of these SiC MOSFETs feature M2 technology.
| EliteSiC SiC MOSFETs | On-resistance | Voltage | Technology |
| NTH4L022N120M3S | 22mΩ | 1,200V | M3S |
| NTBG014N120M3P | 14mΩ | 1,200V | M3P |
| NTBG015N065SC1 | 12mΩ | 650V | M2 |
| NTBG020N090SC1 | 20mΩ | 900V | M2 |