Launch of low-side gate driver for SiC MOSFETs and high-power IGBTs

The new IX4352NE driver IC from Littelfuse offers tailored turn-on and turn-off timing, minimized switching losses, and enhanced dV/dt immunity for high efficiency and reliability in high-voltage power circuits.

Littelfuse has launched the IX4352NE, a low-side gate driver IC which is especially well suited to driving silicon carbide (SiC) MOSFETs and high-power IGBTs in industrial applications.

The IX4352NE features separate 9 A source and sink outputs, which enable tailored turn‑on and turn‑off timing while minimizing switching losses. An internal negative charge regulator also provides a selectable negative gate-drive bias for improved immunity to transient voltage spikes while enabling faster turn-off. The internal regulator eliminates the need for an external auxiliary power supply or dc-dc converter. 

This feature is particularly valuable for turning off SiC MOSFETs, saving valuable space typically required for external logic-level translator circuitry. The logic input’s compatibility with standard TTL or CMOS logic levels enables direct interfacing to a host microcontroller. 

Operating from an input voltage of up to 35 V, this driver offers exceptional flexibility and performance.

The IX4352NE is an improved, pin-compatible version of the IX4351NE, offering: 

  • Safe desaturation-initiated soft turn-off
  • Thermal shutdown with high threshold accuracy
  • Continued operation during thermal shutdown
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