Launch of low-side gate driver for SiC MOSFETs and high-power IGBTs
The new IX4352NE driver IC from Littelfuse offers tailored turn-on and turn-off timing, minimized switching losses, and enhanced dV/dt immunity for high efficiency and reliability in high-voltage power circuits.
Littelfuse has launched the IX4352NE, a low-side gate driver IC which is especially well suited to driving silicon carbide (SiC) MOSFETs and high-power IGBTs in industrial applications.
The IX4352NE features separate 9âA source and sink outputs, which enable tailored turnâon and turnâoff timing while minimizing switching losses. An internal negative charge regulator also provides a selectable negative gate-drive bias for improved immunity to transient voltage spikes while enabling faster turn-off. The internal regulator eliminates the need for an external auxiliary power supply or dc-dc converter.Â
This feature is particularly valuable for turning off SiC MOSFETs, saving valuable space typically required for external logic-level translator circuitry. The logic input’s compatibility with standard TTL or CMOS logic levels enables direct interfacing to a host microcontroller.Â
Operating from an input voltage of up to 35âV, this driver offers exceptional flexibility and performance.
The IX4352NE is an improved, pin-compatible version of the IX4351NE, offering:Â
- Safe desaturation-initiated soft turn-off
- Thermal shutdown with high threshold accuracy
- Continued operation during thermal shutdown