Low-resistance MOSFET reduces conduction loss in compact USB PD systems
The ROHM Semiconductor AW2K21 dual N-channel power MOSFET combines very low on-resistance with a wafer-level chip-scale package to support efficient, bidirectional switching in space-constrained USB Power Delivery (USB PD) circuits.
The AW2K21 from ROHM Semiconductor is a 30V, 20A dual common-source N-channel power MOSFET intended for low-loss switching in USB-PD, battery protection, and load-switch applications. Its low maximum drain-to-drain on-state resistance of 4mΩ reduces conduction losses in high-current paths, helping to limit temperature rise during fast-charge operation and supporting compact power-path layouts without additional parallel devices.
Used as either a unidirectional or bidirectional switch,the AW2K21 is suitable for USB PD systems that must handle power flow in both source and sink modes. An internal 100Ω source resistor supports stable current sensing and protection circuit integration in USB voltage bus (VBUS) and battery-protection designs.
Common-source MOSFETs are integrated in a WLCSP2020 package measuring approximately 2.0mm x 2.0mm. This package format supports high current density while enabling placement close to USB-C® connectors or power controllers. A total gate charge of 29nC and low gate-source-on voltage enables the MOSFET to be driven directly by common USB-PD gate-driver ICs, simplifying power-path control whilst maintaining low component count and reduced board footprint.