New technology in 650V SiC MOSFET drives higher efficiency and faster frequency
The NTHL015N065SC1 EliteSiC silicon carbide (SiC) MOSFET from onsemi features completely new technology which offers superior switching and higher reliability compared to a silicon-based MOSFET.
Rated for 650V with 12mΩ on-resistance, this SiC MOSFET packs these performance features in to a compact TO-247-3L package.
In addition to low on-resistance, the NTHL015N065SC1 offers low capacitance and gate charge. The benefits offered to applications include highest efficiency, faster operation frequency, and increased power density, as well as reduced EMI, and reduced system size.
While the NTHL015N065SC1 has 650V and 12mΩ on-resistance with 163A current in a TO-247-3L package, the higher-voltage NTH4L018N075SC1 is rated for 750V with 18mΩ on-resistance and 140A current in a TO-247-4L package.