Portfolio of SiC MOSFETs, diodes and gate drivers provides wide set of choices to design engineers
The Microchip mSiC™ portfolio of silicon carbide products and design tools gives power-system designers a flexible way to take advantage of the high efficiency, fast switching and excellent thermal conductivity of this wide-bandgap technology.
The Microchip mSiC portfolio of silicon carbide (SiC) discrete power semiconductors and modules offers the benefits of low system cost, fast time-to-market and low risk. It provides the industry’s broadest and most flexible portfolio of SiC MOSFETs, diodes, MOSFET and diode modules, and digital gate drivers.
Wide-bandgap SiC semiconductors are used to control and switch high-power electrical devices and systems. They offer several advantages over traditional silicon devices, including higher operating temperatures, higher breakdown voltage, faster switching speeds, lower on-resistance, and higher ruggedness.
SiC devices are an innovative option to improve system efficiency, shrink a design’s form factor and withstand higher operating temperatures in industrial, transportation, automotive, medical, aerospace, aviation, defense and renewable energy products.
The mSiC portfolio of products takes advantage of Microchip’s more than 20 years of experience in the development, design, manufacturing and support of SiC devices and power solutions. Advanced Microchip research and development and manufacturing capabilities mean that it can produce discrete SiC devices and modules in high volume to the industry’s highest standards of ruggedness and reliability.