Power MOSFETs in space-saving package run at up to 175°C
The SiJH series MOSFETs from Vishay are housed in a thermally efficient PowerPAK package which is 57% thinner than the familiar D2PAK package commonly used for MOSFETs, and occupies a 60% smaller board footprint.
Vishay has extended its range of low-voltage N-channel power MOSFETs that benefit from the high thermal performance and space-saving properties of the PowerPAK® 8 x 8L package.
Like the other TrenchFET® MOSFETs in the series, the new 60 V SiJH600E and 80 V SiJH800E and SiJH5800E offer low on-resistance and withstand operating temperatures up to 175°C.
The PowerPAK package has gullwing leads and solder jointing for reliable operation over a long lifetime. The package characteristics include low thermal resistance for good heat dissipation. The PowerPAK 8 x 8L also has a 50% smaller footprint than a TO-263/D2PAK package, allowing for use in tightly populated board layouts, and resulting in high power density.
The SiJH MOSFETs are intended for use in functions including ORing and synchronous rectification.
| Part Number | Maximum Drain-source Voltage | On-resistance at 10 V | Gate Charge at 10 V | Maximum Continuous Drain Current |
| SiJH440E | 40 V | 0.96 mΩ | 279 nC | 200 A |
| SiJH600E | 60 V | 0.92 mΩ | 141 nC | 373 A |
| SiJH800E | 80 V | 1.55 mΩ | 140 nC | 299 A |
| SiJH5800E | 80 V | 1.35 mΩ | 103 nC | 302 A |
| SiJH112E | 100 V | 2.8 mΩ | 106 nC | 225 A |
| SiJH5700E | 150 V | 4.1 mΩ | 93 nC | 174 A |