Power MOSFETs in space-saving package run at up to 175°C
The SiJH series MOSFETs from Vishay are housed in a thermally efficient PowerPAK package which is 57% thinner than the familiar D2PAK package commonly used for MOSFETs, and occupies a 60% smaller board footprint.
Vishay has extended its range of low-voltage N-channel power MOSFETs that benefit from the high thermal performance and space-saving properties of the PowerPAK® 8 x 8L package.
Like the other TrenchFET® MOSFETs in the series, the new 60 V SiJH600E and 80 V SiJH800E and SiJH5800E offer low on-resistance and withstand operating temperatures up to 175°C.
The PowerPAK package has gullwing leads and solder jointing for reliable operation over a long lifetime. The package characteristics include low thermal resistance for good heat dissipation. The PowerPAK 8 x 8L also has a 50% smaller footprint than a TO-263/D2PAK package, allowing for use in tightly populated board layouts, and resulting in high power density.
The SiJH MOSFETs are intended for use in functions including ORing and synchronous rectification.
|Part Number||Maximum Drain-source Voltage||On-resistance at 10 V||Gate Charge at 10 V||Maximum Continuous Drain Current|
|SiJH440E||40 V||0.96 mΩ||279 nC||200 A|
|SiJH600E||60 V||0.92 mΩ||141 nC||373 A|
|SiJH800E||80 V||1.55 mΩ||140 nC||299 A|
|SiJH5800E||80 V||1.35 mΩ||103 nC||302 A|
|SiJH112E||100 V||2.8 mΩ||106 nC||225 A|
|SiJH5700E||150 V||4.1 mΩ||93 nC||174 A|