Robust 80 V MOSFETs improve efficiency with lower switching losses and softer recovery diode
The new 80 V T10 single N-channel MOSFETs from onsemi feature a softer recovery diode and low reverse-recovery charge and gate charge to minimize driver and conduction losses in motor-drive and voltage-conversion applications.
The new T10 family of 80 V MOSFETs from onsemi benefit from the latest circuit fabrication technology to produce improved performance across many parameters of interest to MOSFET users. The NTBLS0D8N08 and NTMFWS1D5N08 MOSFETs in particular offer low on-resistance and high continuous drain-current capability.
The NTBLS0D8N08, supplied in a TOLL package, has a maximum on-resistance of 0.79 mΩ at 10 V. The maximum continuous drain current is 457 A at 25°C and 323 A at 100°C. At 25°C the current can be pulsed at up to 1,629 A for 100 μs.
The NTMFWS1D5N08 is supplied in an SO8FL package with a maximum on-resistance of 1.43 mΩ at 10 V. The maximum continuous drain current is 253 A at 25°C and 179 A at 100°C. At 25°C the current can be pulsed at up to 1,071 A.
The performance of the MOSFETs has been improved to provide additional avalanche robustness in fast-switching applications. A softer recovery diode and lower reverse-recovery charge also reduce ringing, overshoot, and system noise while increasing application efficiency.