SiC Schottky diode improves efficiency and surge robustness in power conversion
The Nexperia PSC1065H-Q silicon carbide (SiC) Schottky diode reduces switching losses while improving surge robustness, supporting efficient and compact automotive power-conversion designs operating at higher voltages and temperatures.
As a 650V, 10A silicon carbide Schottky diode, the PSC1065H-Q from Nexperia is designed for high-efficiency automotive and industrial power-conversion stages. Through its SiC construction, the diode exhibits zero recovery switching behavior, eliminating reverse recovery losses that typically limit efficiency and increase electromagnetic interference in high-frequency designs.
Efficiency is further supported by an outstanding figure-of-merit based on total capacitive charge and forward voltage, helping to minimize switching losses and reduce overshoot and ringing during fast transitions. This makes the PSC1065H-Q suitable for high power-density converters where thermal headroom and switching performance are tightly constrained.
The robustness of the diode is improved through its merged PiN Schottky (MPS) structure. At low and nominal currents, the diode operates as a Schottky device, while during surge or fault conditions the PiN region conducts and shares current. This architecture increases non-repetitive peak forward current capability to 440A and improves tolerance to transient stress compared with a conventional Schottky diode.