EVSTDRIVEG600DG

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Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with enhanced mode GaN HEMTs

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.

View the EVSTDRIVEG600DM driving 600 V MDmesh DM2 power MOSFET with fast recovery diode.

The EVSTDRIVEG600DG board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving 650 V e-Mode GaN switches. It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers.

Spare footprints are also included to allow customizing the board for the final application, such as separate input signal or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies.

The EVSTDRIVEG600DG is 50 x 70 mm wide, FR-4 PCB resulting in 25 °C/W Rth(J‑A) in still air.

Half-Bridge topology featuring 600V STDRIVEG600 gate driver
Equipped with 150 mΩ 650V HEMT GaN
GaN in 5x6mm PowerFLAT package with Kelvin source
HV bus up to 500 V
4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN VGS rating
On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes
Separated inputs with external deadtime can also be used
On-board 3.3V regulator for external circuitry supply
25°C/W junction-to-ambient thermal resistance to evaluate large power topologies
High frequency connector for gate GaN power transistor monitoring
Optional low-side shunt
RoHS compliant.

Download documentation