The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage N-channel power MOSFETs or enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V.
View the EVSTDRIVEG600DG driving 650 V enhancement-mode GaN switches.
The EVSTDRIVEG600DM board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving 600V MDmesh DM2 Power MOSFET with fast recovery diode. It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers.
Spare footprints are also included to allow customizing the board for the final application, such as separate input signal or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies.
The EVSTDRIVEG600DM is 54 x 88 mm wide, FR-4 PCB resulting in 20 °C/W Rth(J‑A) in still air.
