400 W GaNSTar platform demonstrates high-frequency switching capability of integrated MasterGaN1 half-bridge GaN HEMT and driver from STMicroelectronics.
Market demand calls for power supplies which are ever smaller and lighter, without sacrificing efficiency. It’s a tough challenge for power-system designers – but now the task is eased with the launch of GaNSTar, a rapid development platform which demonstrates the scope for GaN power switches to:
- Support a high switching frequency of 250 kHz at load
- Enable a substantial reduction in system size and weight by educing the size of magnetic components
- Achieve high efficiency of 96%
- Simplify circuit design – the STMicroelectronics MasterGaN1 combines GaN HEMT switches and drivers in a single package
Make the first step in designing a 400 W-rated LLC dc-dc converter as easy as possible by using the GaNSTar development platform. Backed by full technical documentation and support from Future Electronics’ dedicated power electronics specialists, GaNSTar is the ideal starting point for designers who want to discover how GaN technology can help them shrink high-voltage converter circuits.
