NCP-NCV51561TO2473LGEVB

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The NCP-NCV51561TO2473LGEVB is an evaluation board for the NCP/NCV5156x gate driver family, which is suitable for driving the SiC MOSFETs typically used to achieve high efficiency in BESS power conversion circuits.

The NCP5156x series are isolated dual-channel gate drivers featuring 4.5A source and 9A sink peak currents.

They support the fast switching operations of power MOSFETs and SiC MOSFET power switches. The NCP5156x drivers offer short and matched propagation delays, and provide independently 5kVrms of internal galvanic isolation from the input to each output. Internal functional isolation between the two output drivers allows for a working voltage of up to 1500V DC.

This driver can be used in any configuration of two low-side or two high-side switches, or a half−bridge driver with programmable dead time.

Flexible: Dual Low−Side, Dual High−Side or Half−Bridge Gate Driver
Independent UVLO Protections for Both Output Drivers
Output Supply Voltage from 6.5 V to 30 V with 5−V, 8−V for MOSFET, 13−V and 17−V UVLO for SiC, Thresholds
4.5−A Peak Source, 9−A Peak Sink Output
Common Mode Transient Immunity CMTI >200 V/ns
Propagation Delay Typical 36 ns with
♦ 5 ns Max Delay Matching per Channel
♦ 5 ns Max Pulse−Width Distortion
User Programmable Input Logic
♦ Single or Dual−Input Modes Via ANB (NCP51561/563 only)
♦ ENABLE or DISASBLE Mode
User Programmable Dead−Time
Available Package Footprint
♦ Type−A : TO−220, TO−3P, TO−247, D−PAK, and D2PAK
♦ Type−B : TO−247−4L
♦ Type−C : D2PAK−7L

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